VP2206N3-G
| Part No | VP2206N3-G |
|---|---|
| Manufacturer | Microchip |
| Description | MOSFET P-CH 60V 640MA TO92-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
10100
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.9041 | |
| 10 | 2.846 | |
| 100 | 2.7589 | |
| 1000 | 2.6718 | |
| 10000 | 2.5556 |
Products Specifications
| Package | Bag |
|---|---|
| Series | - |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 640mA (Tj) |
| DriveVoltage(MaxRdsOn | 5V, 10V |
| MinRdsOn) | 900mOhm @ 3.5A, 10V |
| RdsOn(Max)@Id | 3.5V @ 10mA |
| Vgs | - |
| Vgs(th)(Max)@Id | ±20V |
| Vgs(Max) | 450 pF @ 25 V |
| InputCapacitance(Ciss)(Max)@Vds | - |
| FETFeature | 740mW (Tc) |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
| OperatingTemperature | Through Hole |
| MountingType | TO-92-3 |
| SupplierDevicePackage | TO-226-3, TO-92-3 (TO-226AA) |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| Qualification |
