SI7942DP-T1-GE3
RoHS

SI7942DP-T1-GE3

SI7942DP-T1-GE3

Vishay

MOSFET 2N-CH 100V 3.8A PPAK SO-8

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SI7942DP-T1-GE3

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Products Specifications
RoHSCompliant
MountSurface Mount
Width5.89 mm
Height1.04 mm
Length4.9 mm
Weight506.605978 mg
Fall Time15 ns
Rise Time15 ns
Rds On Max49 mΩ
Schedule B8541290080
Case/PackageSOIC
Number of Pins8
Power Dissipation1.4 W
Number of Channels2
Number of Elements2
Turn-On Delay Time15 ns
Radiation HardeningNo
Turn-Off Delay Time35 ns
Element ConfigurationDual
Max Power Dissipation1.4 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance49 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)3.8 A
Drain to Source Voltage (Vdss)100 V