SI4384DY-T1-E3
RoHS

SI4384DY-T1-E3

SI4384DY-T1-E3

Vishay

MOSFET N-CH 30V 10A 8-SOIC

Download Datasheet

SI4384DY-T1-E3

Availability: 15512 pieces
Request Quotation
Products Specifications
RoHSCompliant
MountSurface Mount
Width3.9878 mm
Height1.5494 mm
Length4.9784 mm
Weight186.993455 mg
Fall Time13 ns
Lead FreeLead Free
Rise Time13 ns
REACH SVHCUnknown
Rds On Max8.5 mΩ
Resistance8.5 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Nominal Vgs1 V
Case/PackageSO
Number of Pins8
Contact PlatingTin
Power Dissipation1.47 W
Number of Channels1
Number of Elements1
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time45 ns
Element ConfigurationSingle
Max Power Dissipation1.47 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance8.5 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)15 A
Drain to Source Voltage (Vdss)30 V