SI2399DS-T1-GE3
RoHS

SI2399DS-T1-GE3

SI2399DS-T1-GE3

Vishay

MOSFET P-CH 20V 6A SOT-23

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SI2399DS-T1-GE3

Availability: 18519 pieces
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Products Specifications
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time9 ns
Lead FreeLead Free
PackagingTape & Reel (TR)
Rise Time20 ns
REACH SVHCNo SVHC
Rds On Max34 mΩ
Schedule B8541290080
Nominal Vgs-600 mV
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance835 pF
Power Dissipation1.25 W
Threshold Voltage-600 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time22 ns
Radiation HardeningNo
Turn-Off Delay Time28 ns
Max Power Dissipation2.5 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance28 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)-6 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-20 V
Drain to Source Breakdown Voltage-20 V